High quality group 3 nitrides epitaxial films on Si substrate are our target. The plasma assisted molecular beam epitaxy (PA-MBE) growth using a VG80H MBE machine in a clean room of Doshisha University is developed using results of highe tch research project of Doshisha University.
Back ground of foundation of IERE Laboratory
Basic philosophy of interface reaction epitaxy laboratory
About the laboratory
| Name | Interface Reaction Epitaxy Laboratory（IRE Laboratory） |
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| Location |
3-19, Nanasegawa Miyamaki, Kyoutanabe,
Kyoto, 610-0313, Japan |
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| TEL | 0774-63-2168 |
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| FAX | 0774-63-2168 |
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| Foundation | February 12, 2012 |
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| Director | Tadashi Ohachi |
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| Business items | Development of basic techniques of MBE growthof group 3 nitrides on Si using IRE and AM-MEE. Xray characterization of grown Epitaxial films of group 3 nitrides on Si. |
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