１．Development of MBE growth techniques

• Production of AIN,GaN,InN and their alloy films on Si
• Production of HEMT device of AIN,GaN,InN and their alloy on Si using IRE techniques
• Production of Tera Hz devices of AIN,GaN,InN and their alloy on Si using IRE techniques

２．Advise for maintenance of MBE equipment

• Advice through practice using MBE equipment
• Advice through video recording

３．Offer references on MBE growth of group 3 nitrides

４．Advice for development and usage of induction coupling re discharge

５．X-ray characterization of epitaxial films and epitxial devices